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| PartNumber | BSP716NH6327XTSA1 | BSP716N | BSP716NH6327 |
| Description | MOSFET SMALL SIGNAL+N-CH | 75V,180m��,2.3A,N-Ch Small-Signal MOSFET | |
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 2.3 A | - | - |
| Rds On Drain Source Resistance | 160 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 5.71 S | - | - |
| Fall Time | 16.7 ns | 16.7 ns | 16.7 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 5.5 ns | 5.5 ns | 5.5 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50.1 ns | 50.1 ns | 50.1 ns |
| Typical Turn On Delay Time | 4.6 ns | 4.6 ns | 4.6 ns |
| Part # Aliases | BSP716N H6327 SP001087514 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Part Aliases | - | BSP716N H6327 SP001087514 | BSP716N H6327 SP001087514 |
| Package Case | - | SOT-223-4 | SOT-223-4 |
| Pd Power Dissipation | - | 1.8 W | 1.8 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 2.3 A | 2.3 A |
| Vds Drain Source Breakdown Voltage | - | 75 V | 75 V |
| Vgs th Gate Source Threshold Voltage | - | 800 mV | 800 mV |
| Rds On Drain Source Resistance | - | 160 mOhms | 160 mOhms |
| Qg Gate Charge | - | 8.7 nC | 8.7 nC |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP716NH6327XTSA1 | MOSFET SMALL SIGNAL+N-CH | |
| BSP716NH6327XTSA1 | MOSFET N-CH 75V 2.3A SOT223 | ||
| BSP716N | Жаңа және түпнұсқа | ||
| BSP716NH6327 | 75V,180m��,2.3A,N-Ch Small-Signal MOSFET | ||
| BSP716N H6327 | Жаңа және түпнұсқа |