BSP125H

BSP125H6433XTMA1 vs BSP125H6327XTSA1

 
PartNumberBSP125H6433XTMA1BSP125H6327XTSA1
DescriptionMOSFET N-Ch 600V 120mA SOT-223-3MOSFET N-Ch 600V 120mA SOT-223-3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-223-4SOT-223-4
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current120 mA120 mA
Rds On Drain Source Resistance25 Ohms25 Ohms
Vgs th Gate Source Threshold Voltage1.3 V1.3 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge6.6 nC6.6 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation1.8 W1.8 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1.6 mm1.6 mm
Length6.5 mm6.5 mm
SeriesBSP125BSP125
Transistor Type1 N-Channel1 N-Channel
Width3.5 mm3.5 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min60 mS60 mS
Fall Time110 ns110 ns
Product TypeMOSFETMOSFET
Rise Time14.4 ns14.4 ns
Factory Pack Quantity40001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns20 ns
Typical Turn On Delay Time7.7 ns7.7 ns
Part # AliasesBSP125 H6433 SP001058578BSP125 H6327 SP001058576
Unit Weight0.003951 oz0.003951 oz
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
BSP125H6433XTMA1 MOSFET N-Ch 600V 120mA SOT-223-3
BSP125H6327XTSA1 MOSFET N-Ch 600V 120mA SOT-223-3
BSP125H6433XTMA1 IGBT Transistors MOSFET N-Ch 600V 120mA SOT-223-3
BSP125H6327XTSA1 IGBT Transistors MOSFET N-Ch 600V 120mA SOT-223-3
BSP125H6327XTSA1/SN Trans MOSFET N-CH 600V 0.12A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP125H6327XTSA1)
BSP125H6327 600V,4.5��,0.12A,N-Channel Power MOSFET
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