BSM75GA

BSM75GAL120DN2 vs BSM75GAR120DN2 vs BSM75GAL120DN2HOSA1

 
PartNumberBSM75GAL120DN2BSM75GAR120DN2BSM75GAL120DN2HOSA1
DescriptionIGBT Modules 1200V 75A CHOPPERIGBT Transistors 1200V 100A GAR CHMEDIUM POWER 34MM
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Transistors-
RoHSYY-
ProductIGBT Silicon Modules--
ConfigurationHalf BridgeSingle-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2.5 V2.5 V-
Continuous Collector Current at 25 C105 A100 A-
Gate Emitter Leakage Current400 nA400 nA-
Pd Power Dissipation625 W625 W-
Package / CaseHalf Bridge GAL 1IS4 (34 mm )-5-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTrayTray-
Height30.5 mm30.5 mm-
Length94 mm94 mm-
Width34 mm34 mm-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Transistors-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesBSM75GAL120DN2HOSA1 SP000106455BSM75GAR120DN2HOSA1 SP000100462-
Technology-Si-
Continuous Collector Current-105 A-
Unit Weight-5.436423 oz-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
BSM75GAL120DN2 IGBT Modules 1200V 75A CHOPPER
BSM75GAR120DN2 IGBT Transistors 1200V 100A GAR CH
BSM75GAL120DN2HOSA1 MEDIUM POWER 34MM
BSM75GAR120DN2HOSA1 IGBT 2 MED POWER 34MM-1
BSM75GAL100D Жаңа және түпнұсқа
BSM75GAL120D Жаңа және түпнұсқа
BSM75GAL60DLC Жаңа және түпнұсқа
BSM75GAR120D Жаңа және түпнұсқа
BSM75GAR170DN2 Жаңа және түпнұсқа
BSM75GAL120DN2 IGBT Modules 1200V 75A CHOPPER
BSM75GAR120DN2 IGBT Transistors 1200V 100A GAR CH
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