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| PartNumber | BSM180C12P2E202 | BSM180C12P2E202-EDEM3 | BSM180C12P3C202 |
| Description | Discrete Semiconductor Modules 1200V Vdss; 204A ID SiC Mod; SICSTD02 | SiC-N-Ch/SBD 1200V 180A 880W C-Pack | |
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | Discrete Semiconductor Modules | - | - |
| RoHS | Y | - | - |
| Product | Power Semiconductor Modules | - | - |
| Type | SiC Power Module | - | - |
| Vf Forward Voltage | 1.6 V at 180 A | - | - |
| Vgs Gate Source Voltage | - 6 V, 22 V | - | - |
| Mounting Style | Screw Mount | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BSMx | - | - |
| Packaging | Tray | - | - |
| Configuration | Chopper | - | - |
| Technology | SiC | - | - |
| Brand | ROHM Semiconductor | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Delay Time | 49 ns | - | - |
| Fall Time | 32 ns | - | - |
| Id Continuous Drain Current | 204 A | - | - |
| Pd Power Dissipation | 1360 W | - | - |
| Product Type | Discrete Semiconductor Modules | - | - |
| Rise Time | 36 ns | - | - |
| Factory Pack Quantity | 4 | - | - |
| Subcategory | Discrete Semiconductor Modules | - | - |
| Typical Turn Off Delay Time | 139 ns | - | - |
| Typical Turn On Delay Time | 49 ns | - | - |
| Vds Drain Source Breakdown Voltage | 1200 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |