 | |  | |
| PartNumber | BSH111BKR | BSH114,215 | BSH121,135 |
| Description | MOSFET 55V N-channel Trench MOSFET | MOSFET TAPE7 PWR-MO | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | 100 V | - |
| Id Continuous Drain Current | 210 mA | 850 mA | - |
| Rds On Drain Source Resistance | 4 Ohms | 500 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | 2 V | - |
| Vgs Gate Source Voltage | 4.5 V | 10 V | - |
| Qg Gate Charge | 0.5 nC | 4.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 364 mW | 0.83 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel Trench MOSFET | 1 N-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Fall Time | 4.8 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8.4 ns | 13 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 12.6 ns | 8 ns | - |
| Typical Turn On Delay Time | 8.3 ns | 6 ns | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Height | - | 1 mm | - |
| Length | - | 3 mm | - |
| Product | - | MOSFET Small Signal | - |
| Width | - | 1.4 mm | - |
| Part # Aliases | - | BSH114 T/R | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Nexperia |
BSH111BKR | MOSFET 55V N-channel Trench MOSFET | |
| BSH201,215 | MOSFET TAPE7 MOSFET | ||
| BSH114,215 | MOSFET TAPE7 PWR-MO | ||
| BSH202,215 | MOSFET TAPE7 MOSFET | ||
| BSH111BKR | MOSFET N-CH 55V SOT-23 | ||
| BSH114,215 | MOSFET N-CH 100V 500MA SOT23 | ||
| BSH201,215 | MOSFET P-CH 60V 300MA SOT-23 | ||
| BSH121,135 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
Panduit |
BSH14-Q | Terminals BUTT SPLICE 14AWG | |
| BSH14-D | Terminals Butt Splice Heat Shrink 16-14 AWG | ||
| BSH14-Q | Terminals BUTT SPLICE 14AWG | ||
| BSH18-Q | Terminals BUTT SPLICE 18AWG | ||
| BSH111/WK3 | Жаңа және түпнұсқа | ||
| BSH111BK | Жаңа және түпнұсқа | ||
| BSH112 | Жаңа және түпнұсқа | ||
| BSH114 | Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| BSH114215 | Now Nexperia BSH114 - Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| BSH121 | Small Signal Field-Effect Transistor, 0.3A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH201 | SmallSignalField-EffectTransistor,0.52AI(D),30V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET | ||
| BSH202+215 | Now Nexperia BSH202 - Small Signal Field-Effect Transistor, 0.52A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH202 | MOSFET, P CHANNEL, 30V, 0.52A, SOT23, Transistor Polarity:P Channel, Continuous Drain Current Id:-520mA, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.63ohm, Rds(on) Test Voltage Vgs:-10 | ||
| BSH111125 | Жаңа және түпнұсқа | ||
| BSH111215 | MOSFET N-CH TRNCH 55V 335MA | ||
| BSH111235 | Жаңа және түпнұсқа | ||
| BSH111BKR 4E.W4T | Жаңа және түпнұсқа | ||
| BSH111T/R | Жаңа және түпнұсқа | ||
| BSH112 ,235 | Жаңа және түпнұсқа | ||
| BSH112235 | Now Nexperia BSH112 - Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| BSH112T3 | Жаңа және түпнұсқа | ||
| BSH113 | Жаңа және түпнұсқа | ||
| BSH114 , TDZGTR27 , J40 | Жаңа және түпнұсқа | ||
| BSH114+215 | Now Nexperia BSH114 - Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| BSH115 | Жаңа және түпнұсқа | ||
| BSH120T | Жаңа және түпнұсқа | ||
| BSH121+135 | Now Nexperia BSH121 - Small Signal Field-Effect Transistor, 0.3A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH121-T | Жаңа және түпнұсқа | ||
| BSH121115 | Жаңа және түпнұсқа | ||
| BSH121135 | Now Nexperia BSH121 - Small Signal Field-Effect Transistor, 0.3A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH13-01 | Жаңа және түпнұсқа | ||
| BSH201 , MAX6442KAEIRD3 | Жаңа және түпнұсқа | ||
| BSH201+215 | Now Nexperia BSH201 - Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH201/WJ6 | Жаңа және түпнұсқа | ||
| BSH201215 | Now Nexperia BSH201 - Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH202 , MAX6335US22D3 | Жаңа және түпнұсқа | ||
| BSH14-QY | Terminals BUTT SPLICE 14AWG | ||
| BSH18-QY | Terminals BUTT SPLICE 18AWG | ||
| BSH111BKR-CUT TAPE | Жаңа және түпнұсқа | ||
| BSH114,215-CUT TAPE | Жаңа және түпнұсқа | ||
| BSH201,215-CUT TAPE | Жаңа және түпнұсқа | ||
NXP Semiconductors |
BSH112,235 | MOSFET N-CH 60V 300MA SOT-23 |