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| PartNumber | BSC084P03NS3E G | BSC084P03NS3EGATMA | BSC084P03NS3EG |
| Description | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | Transistor: P-MOSFET, unipolar, -30V, -78.6A, 69W, PG-TDSON-8 | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 78.6 A | - | - |
| Rds On Drain Source Resistance | 8.4 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 43.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS P3 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 8.1 nS | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 133.5 nS | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33.3 nS | - | - |
| Part # Aliases | BSC084P03NS3EGATMA1 BSC84P3NS3EGXT SP000473012 | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC084P03NS3E G | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | |
| BSC084P03NS3EGATMA1 | MOSFET P-CH 30V 14.9A TDSON-8 | ||
| BSC084P03NS3EGATMA | Transistor: P-MOSFET, unipolar, -30V, -78.6A, 69W, PG-TDSON-8 | ||
| BSC084P03NS3EG | Жаңа және түпнұсқа | ||
| BSC084P03NS3E G | RF Bipolar Transistors MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 |