 |  | | |
| PartNumber | BSC082N10LS G | BSC082N10LS | BSC082N10LSG |
| Description | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON T/R (Alt: BSC082N10LS G) | |
| Manufacturer | Infineon | - | |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 13.8 A | - | - |
| Rds On Drain Source Resistance | 8.2 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 156 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 24 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 53 ns | - | - |
| Typical Turn On Delay Time | 19 ns | - | - |
| Part # Aliases | BSC082N10LSGATMA1 BSC82N1LSGXT SP000379609 | - | - |
| Unit Weight | 0.007055 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC082N10LS G | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | |
| BSC082N10LSGATMA1 | MOSFET N-CH 100V 100A TDSON-8 | ||
| BSC082N10LS | Жаңа және түпнұсқа | ||
| BSC082N10LSG | Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON T/R (Alt: BSC082N10LS G) | ||
| BSC082N10LSGATMA1 , TDK5 | Жаңа және түпнұсқа | ||
| BSC082N10LS G | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 |