 | | | |
| PartNumber | BSC060N10NS3 G | BSC060N10NS3GATMA1 | BSC060P03NS3E G |
| Description | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | MOSFET P-Ch -30V -100A TDSON-8 OptiMOS P3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 30 V |
| Id Continuous Drain Current | 90 A | 90 A | 100 A |
| Rds On Drain Source Resistance | 5.3 mOhms | 5.3 mOhms | 6 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 25 V |
| Qg Gate Charge | 68 nC | 68 nC | 61 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 125 W | 125 W | 83 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS P3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 P-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 43 S | 43 S | - |
| Fall Time | 12 ns | 12 ns | 34 nS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 16 ns | 16 ns | 139 nS |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 45 ns | 66 nS |
| Typical Turn On Delay Time | 20 ns | 20 ns | - |
| Part # Aliases | BSC060N10NS3GATMA1 BSC6N1NS3GXT SP000446584 | BSC060N10NS3 BSC6N1NS3GXT G SP000446584 | BSC060P03NS3EGATMA1 BSC6P3NS3EGXT SP000472984 |
| Unit Weight | 0.003527 oz | 0.004030 oz | 0.003527 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC060N10NS3 G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | |
| BSC060N10NS3GATMA1 | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | ||
| BSC060P03NS3E G | MOSFET P-Ch -30V -100A TDSON-8 OptiMOS P3 | ||
| BSC060N10NS3GATMA1 | MOSFET N-CH 100V 90A TDSON-8 | ||
| BSC060P03NS3EGATMA1 | MOSFET P-CH 30V 17.7A TDSON-8 | ||
Infineon Technologies |
BSC060P03NS3EGATMA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSC0600NS | Жаңа және түпнұсқа | ||
| BSC060N10NS | Жаңа және түпнұсқа | ||
| BSC060N10NS3 | Жаңа және түпнұсқа | ||
| BSC060N10NS3 G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | ||
| BSC060N10NS3G | Trans MOSFET N-CH 100V 14.9A 8-Pin TDSON T/R (Alt: BSC060N10NS3 G) | ||
| BSC060N10NS3GATMA1 , TDA | Жаңа және түпнұсқа | ||
| BSC060P03NS3E G | Trans MOSFET P-CH 30V 17.7A 8-Pin TDSON EP | ||
| BSC060P03NS3EG | -30V,-17.7A,P-channel power MOSFET |