BSC034N06

BSC034N06NSATMA1 vs BSC034N06NS vs BSC034N06NSATMA1-CUT TAPE

 
PartNumberBSC034N06NSATMA1BSC034N06NSBSC034N06NSATMA1-CUT TAPE
DescriptionMOSFET MV POWER MOSMOSFET DIFFERENTIATED MOSFETS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TDSON-8PG-TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance3.4 mOhms3.4 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V2.1 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge33 nC33 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation74 W74 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 5OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min46 S46 S-
Fall Time5 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns5 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time9 ns9 ns-
Part # AliasesBSC034N06NS SP001067010BSC034N06NSATMA1 SP001067010-
Unit Weight0.004180 oz0.006702 oz-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
BSC034N06NSATMA1 MOSFET MV POWER MOS
BSC034N06NS MOSFET DIFFERENTIATED MOSFETS
BSC034N06NSATMA1 MOSFET N-CH 60V 100A 8TDSON
BSC034N06NS MOSFET DIFFERENTIATED MOSFETS
BSC034N06NSATMA1-CUT TAPE Жаңа және түпнұсқа
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