 | | |
| PartNumber | BSC017N04NS G | BSC017N04NSGATMA1 |
| Description | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - |
| Id Continuous Drain Current | 30 A | - |
| Rds On Drain Source Resistance | 1.7 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2.5 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 6.8 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 5.8 ns | - |
| Factory Pack Quantity | 5000 | - |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | - |
| Typical Turn On Delay Time | 23 ns | - |
| Part # Aliases | BSC017N04NSGATMA1 BSC17N4NSGXT SP000394684 | BSC017N04NS BSC17N4NSGXT G SP000394684 |
| Unit Weight | 0.003527 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC017N04NS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | |
| BSC017N04NS G | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP | ||
| BSC017N04NSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
Infineon Technologies |
BSC017N04NSGATMA1 | MOSFET MV POWER MOS | |
| BSC017N04NS | Жаңа және түпнұсқа | ||
| BSC017N04NSG | Жаңа және түпнұсқа |