| PartNumber | BSC014N03MS G | BSC014N03LSGATMA1 | BSC014N03LS G |
| Description | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 30 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 1.4 mOhms | 1.2 mOhms | 1.2 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 139 W | 139 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 16 ns | 8.6 ns | 8.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 16 ns | 8.6 ns | 8.6 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 43 ns | 51 ns | 51 ns |
| Typical Turn On Delay Time | 32 ns | 13 ns | 13 ns |
| Part # Aliases | BSC014N03MSGATMA1 BSC14N3MSGXT SP000394681 | BSC014N03LS BSC14N3LSGXT G SP000394677 | BSC014N03LSGATMA1 BSC14N3LSGXT SP000394677 |
| Vgs th Gate Source Threshold Voltage | - | 1 V | 1 V |
| Qg Gate Charge | - | 131 nC | 131 nC |
| Forward Transconductance Min | - | 65 S | 65 S |