 | | | |
| PartNumber | BSC011N03LS | BSC011N03LSI | BSC011N03LSATMA1 |
| Description | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | PG-TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 1.1 mOhms | 1.1 mOhms | 900 uOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 72 nC | 68 nC | 96 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 96 W | 96 W | 96 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 85 S | 80 S | 85 S |
| Fall Time | 6.2 ns | 6.2 ns | 6.2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8.8 ns | 9.2 ns | 8.8 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 37 ns | 35 ns | 37 ns |
| Typical Turn On Delay Time | 6.7 ns | 6.4 ns | 6.7 ns |
| Part # Aliases | BSC011N03LSATMA1 BSC11N3LSXT SP000799082 | BSC011N03LSIATMA1 BSC11N3LSIXT SP000884574 | BSC011N03LS BSC11N3LSXT SP000799082 |
| Unit Weight | 0.003527 oz | 0.003527 oz | 0.010582 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC011N03LSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| BSC011N03LS | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | ||
| BSC011N03LSI | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS | ||
| BSC011N03LSATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | ||
| BSC011N03LSIXT | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS | ||
| BSC011N03LSATMA1 | MOSFET N-CH 30V 100A 8TDSON | ||
| BSC011N03LSIATMA1 | MOSFET N-CH 30V 37A TDSON-8 | ||
Infineon Technologies |
BSC011N03LSIATMA1 | MOSFET LV POWER MOS | |
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| BSC011N03L | Жаңа және түпнұсқа | ||
| BSC011N03LS | Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP | ||
| BSC011N03LSG | Жаңа және түпнұсқа | ||
| BSC011N03LSI | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS | ||
| BSC011N03LSI BSC011N03LS | Жаңа және түпнұсқа | ||
| BSC011N03LSIXT | IGBT Transistors MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS |