 | |  | |
| PartNumber | BSC047N08NS3 G | BSC047N08NS3GATMA1 | BSC048N025S G |
| Description | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | MOSFET N-CH 25V 89A TDSON-8 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 3.9 mOhms | 3.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 69 nC | 69 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 125 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 60 S | 60 S | - |
| Fall Time | 11 ns | 11 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 17 ns | 17 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 44 ns | 44 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Part # Aliases | BSC047N08NS3GATMA1 BSC47N8NS3GXT SP000436372 | BSC047N08NS3 BSC47N8NS3GXT G SP000436372 | - |
| Unit Weight | 0.006349 oz | 0.004310 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC0503NSIATMA1 | MOSFET LV POWER MOS | |
| BSC0502NSIATMA1 | MOSFET LV POWER MOS | ||
| BSC0504NSIATMA1 | MOSFET LV POWER MOS | ||
| BSC047N08NS3 G | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | ||
| BSC050N03LS G | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | ||
| BSC050N04LS G | MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 | ||
| BSC047N08NS3GATMA1 | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | ||
| BSC050N03LSGATMA1 | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | ||
| BSC050N04LSGATMA1 | MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 | ||
| BSC050N03LSGXT | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | ||
| BSC050N03MS G | MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M | ||
| BSC0501NSIATMA1 | MOSFET LV POWER MOS | ||
| BSC0500NSIATMA1 | MOSFET LV POWER MOS | ||
| BSC047N08NS3GATMA1 | MOSFET N-CH 80V 100A TDSON-8 | ||
| BSC0500NSIATMA1 | MOSFET N-CH 30V 35A TDSON-8 | ||
| BSC050N03LSGATMA1 | MOSFET N-CH 30V 80A TDSON-8 | ||
| BSC050N03MSGATMA1 | MOSFET N-CH 30V 80A TDSON-8 | ||
| BSC050N04LSGATMA1 | MOSFET N-CH 40V 85A TDSON-8 | ||
| BSC0501NSIATMA1 | MOSFET N-CH 30V 29A 8TDSON | ||
| BSC0502NSIATMA1 | MOSFET N-CH 30V 26A TDSON-8 | ||
| BSC0503NSIATMA1 | MOSFET N-CH 30V 22A TDSON-8 | ||
| BSC0504NSIATMA1 | MOSFET N-CH 30V 21A TDSON-8 | ||
| BSC048N025S G | MOSFET N-CH 25V 89A TDSON-8 | ||
| BSC047N08NS3 G | MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1 | ||
| BSC047N08NS3G | Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G) | ||
| BSC047N08NS3GS | Жаңа және түпнұсқа | ||
| BSC047N08NSG | Жаңа және түпнұсқа | ||
| BSC048N025SG | Жаңа және түпнұсқа | ||
| BSC048N025SGATMA1 | Жаңа және түпнұсқа | ||
| BSC0502NSI | Жаңа және түпнұсқа | ||
| BSC0504NSI | Жаңа және түпнұсқа | ||
| BSC050N03LS | Жаңа және түпнұсқа | ||
| BSC050N03LS G | Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP | ||
| BSC050N03LSG | Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP | ||
| BSC050N03LSG 08 | Жаңа және түпнұсқа | ||
| BSC050N03LSGATMA1 , TDA8 | Жаңа және түпнұсқа | ||
| BSC050N03LSGXT | Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC050N03MS | Жаңа және түпнұсқа | ||
| BSC050N03MS G | MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M | ||
| BSC050N03MSG | 30V,80A,N-channel power MOSFET | ||
| BSC050N03MSGATMA1 , TDA8 | Жаңа және түпнұсқа | ||
| BSC050N03S | Жаңа және түпнұсқа | ||
| BSC050N04LS | Жаңа және түпнұсқа | ||
| BSC050N04LS G | Жаңа және түпнұсқа | ||
| BSC050N04LSG | Trans MOSFET N-CH 40V 18A 8-Pin TDSON EP (Alt: BSC050N04LS G) | ||
| BSC050N04LSGATMA1 , TDA8 | Жаңа және түпнұсқа | ||
| BSC050N08NS5 | Жаңа және түпнұсқа | ||
| BSC050N0LSG | Жаңа және түпнұсқа | ||
| BSC0500NSIATMA1-CUT TAPE | Жаңа және түпнұсқа | ||
| BSC050N03LSGATMA1-CUT TAPE | Жаңа және түпнұсқа |