PartNumber | BS107PSTZ | BS108G | BS107PSTOB |
Description | MOSFET N-Chnl 200V | MOSFET 200V 250mA Logic Level N-Channel | MOSFET N-Chnl 200V |
Manufacturer | Diodes Incorporated | ON Semiconductor | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
Id Continuous Drain Current | 120 mA | 250 mA | 120 mA |
Rds On Drain Source Resistance | 15 Ohms | 8 Ohms | 15 Ohms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 500 mW (1/2 W) | 350 mW | 500 mW (1/2 W) |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Bulk | Bulk | Bulk |
Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Series | BS107 | - | BS107 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | FET | MOSFET | FET |
Brand | Diodes Incorporated | ON Semiconductor | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2000 | 1000 | 4000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.008818 oz | 0.016000 oz | 0.016000 oz |
Height | - | 5.33 mm | - |
Length | - | 5.2 mm | - |
Width | - | 4.19 mm | - |
Forward Transconductance Min | - | 0.33 S | - |
Typical Turn Off Delay Time | - | 15 ns | - |
Typical Turn On Delay Time | - | 15 ns | - |