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| PartNumber | BLA6G1011LS-200RG | BLA6G1011LS-200RG11 | BLA6G1011LS-200RG, |
| Description | BLA6G1011LS-200RG/SOT | Now Ampleon, BLA6G1011LS-200RG, Power LDMOS transistor, SOT502 (LDMOST) | RF MOSFET Transistors PWR LDMOS TRANSISTOR |
| Manufacturer | - | - | |
| Product Category | - | - | RF FETs |
| RoHS | - | - | Details |
| Transistor Polarity | - | - | N-Channel |
| Id Continuous Drain Current | - | - | 49 A |
| Vds Drain Source Breakdown Voltage | - | - | 65 V |
| Rds On Drain Source Resistance | - | - | 930 mOhms |
| Technology | - | - | Si |
| Gain | - | - | 20 dB |
| Output Power | - | - | 200 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | SOT-502C-3 |
| Packaging | - | - | Tube |
| Brand | - | - | NXP Semiconductors |
| Operating Frequency | - | - | 1.03 GHz to 1.09 GHz |
| Type | - | - | RF Power MOSFET |
| Vgs Gate Source Voltage | - | - | 13 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |