BCW30LT1G

BCW30LT1G vs BCW30LT1G (PB) vs BCW30LT1G-CUT TAPE

 
PartNumberBCW30LT1GBCW30LT1G (PB)BCW30LT1G-CUT TAPE
DescriptionBipolar Transistors - BJT 100mA 32V PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 32 V--
Collector Base Voltage VCBO- 32 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.3 V--
Maximum DC Collector Current0.1 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesBCW30L--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.1 A--
DC Collector/Base Gain hfe Min215--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Өндіруші Бөлім № Сипаттама RFQ
BCW30LT1G Bipolar Transistors - BJT 100mA 32V PNP
BCW30LT1G-CUT TAPE Жаңа және түпнұсқа
ON Semiconductor
ON Semiconductor
BCW30LT1G (PB) Жаңа және түпнұсқа
BCW30LT1G Bipolar Transistors - BJT 100mA 32V PNP
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