 |  | | |
| PartNumber | BCP5210TA | BCP5210 | BCP5210TA-79 |
| Description | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon | |
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 125 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCP52 | - | - |
| DC Current Gain hFE Max | 63 | - | - |
| Height | 1.65 mm | - | - |
| Length | 6.7 mm | - | - |
| Packaging | Reel | - | - |
| Width | 3.7 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| DC Collector/Base Gain hfe Min | 63 at 150 mA, 2 V | - | - |
| Pd Power Dissipation | 2000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
BCP5210TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K | |
NXP Semiconductors |
BCP5210 | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon | |
| BCP5210TA-79 | Жаңа және түпнұсқа | ||
| BCP5210TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K |