| PartNumber | AUIRF7749L2TR | AUIRF7769L2TR | AUIRF7805Q |
| Description | MOSFET N-CHANNEL 55 / 60 | MOSFET N-CHANNEL 75 / 80 | MOSFET AUTO 30V 1 N-CH HEXFET 11mOhms |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DirectFET-L8 | DirectFET-L8 | SO-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 100 V | 30 V |
| Id Continuous Drain Current | 375 A | 124 A | 13 A |
| Rds On Drain Source Resistance | 1.1 mOhms | 3.5 mOhms | 11 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 12 V |
| Qg Gate Charge | 275 nC | 200 nC | 22 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 341 W | 125 W | 2.5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Tube |
| Height | 0.74 mm | 0.74 mm | 1.75 mm |
| Length | 9.15 mm | 9.15 mm | 4.9 mm |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 7.1 mm | 7.1 mm | 3.9 mm |
| Brand | Infineon / IR | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 185 S | 410 S | - |
| Fall Time | 88 ns | 41 ns | 16 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 149 ns | 32 ns | 20 ns |
| Factory Pack Quantity | 4000 | 4000 | 95 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 72 ns | 92 ns | 38 ns |
| Typical Turn On Delay Time | 29 ns | 44 ns | 16 ns |
| Part # Aliases | SP001521068 | SP001522786 | SP001522050 |
| Unit Weight | - | - | 0.019048 oz |