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| PartNumber | ATP613-TL-H | ATP602-TL-H | ATP602 |
| Description | MOSFET 2KB I2C SER EEPROM | IGBT Transistors MOSFET POWER MOSFET | |
| Manufacturer | ON Semiconductor | SANYO | SANYO |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | MOSFET (Metal Oxide) |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ATPAK-3 | - | ATPAK (2 leads+tab) |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 5.5 A | - | - |
| Rds On Drain Source Resistance | 2 Ohms | - | - |
| Packaging | Reel | - | Cut Tape (CT) |
| Series | ATP613 | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Part Status | - | - | Obsolete |
| FET Type | - | - | N-Channel |
| Drain to Source Voltage (Vdss) | - | - | 600V |
| Current Continuous Drain (Id) @ 25°C | - | - | 5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 10V |
| Vgs(th) (Max) @ Id | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 13.6nC @ 10V |
| Vgs (Max) | - | - | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 350pF @ 30V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 70W (Tc) |
| Rds On (Max) @ Id, Vgs | - | - | 2.7 Ohm @ 2.5A, 10V |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | ATPAK |