| PartNumber | ATF-58143-TR1G | ATF-58143-TR2G |
| Description | RF JFET Transistors Transistor GaAs Single Voltage | RF JFET Transistors Transistor GaAs Single Voltage |
| Manufacturer | Broadcom Limited | Broadcom Limited |
| Product Category | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y |
| Transistor Type | EpHEMT | EpHEMT |
| Technology | GaAs | GaAs |
| Gain | 16.5 dB | 16.5 dB |
| Vds Drain Source Breakdown Voltage | 5 V | 5 V |
| Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - 5 V to 1 V |
| Id Continuous Drain Current | 100 mA | 100 mA |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-343 | SOT-343 |
| Packaging | Reel | Reel |
| Configuration | Single Dual Source | Single Dual Source |
| Operating Frequency | 2 GHz | 2 GHz |
| Product | RF JFET | RF JFET |
| Type | GaAs EpHEMT | GaAs EpHEMT |
| Brand | Broadcom / Avago | Broadcom / Avago |
| Forward Transconductance Min | 410 mmho | 410 mmho |
| NF Noise Figure | 0.5 dB | 0.5 dB |
| P1dB Compression Point | 19 dBm | 19 dBm |
| Product Type | RF JFET Transistors | RF JFET Transistors |
| Factory Pack Quantity | 3000 | 10000 |
| Subcategory | Transistors | Transistors |