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| PartNumber | AS4C32M16MD1-5BIN | AS4C32M16MD1-5BCN | AS4C32M16MD1-5BCNTR |
| Description | DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR | DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR | IC DRAM 512M PARALLEL 60FPBGA |
| Manufacturer | Alliance Memory | Alliance Memory | Alliance Memory, Inc. |
| Product Category | DRAM | DRAM | Memory |
| RoHS | Y | Y | - |
| Type | SDRAM Mobile - LPDDR1 | SDRAM Mobile - LPDDR1 | - |
| Series | AS4C32M16MD1 | AS4C32M16MD1 | - |
| Packaging | Tray | Tray | Tape & Reel (TR) Alternate Packaging |
| Brand | Alliance Memory | Alliance Memory | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | DRAM | DRAM | - |
| Factory Pack Quantity | 160 | 160 | - |
| Subcategory | Memory & Data Storage | Memory & Data Storage | - |
| Data Bus Width | - | 16 bit | - |
| Organization | - | 32 M x 16 | - |
| Package / Case | - | FPBGA-60 | - |
| Memory Size | - | 512 Mbit | 512M (32M x 16) |
| Maximum Clock Frequency | - | 166 MHz | - |
| Access Time | - | 5 ns | - |
| Supply Voltage Max | - | 1.9 V | - |
| Supply Voltage Min | - | 1.7 V | - |
| Supply Current Max | - | 70 mA | - |
| Minimum Operating Temperature | - | - 25 C | - |
| Maximum Operating Temperature | - | + 85 C | - |
| Mounting Style | - | SMD/SMT | - |
| Operating Supply Voltage | - | 1.7 V to 1.9 V | - |
| Package Case | - | - | 60-TFBGA |
| Operating Temperature | - | - | -30°C ~ 85°C (TJ) |
| Interface | - | - | Parallel |
| Voltage Supply | - | - | 1.7 V ~ 1.9 V |
| Supplier Device Package | - | - | 60-FPBGA (8x10) |
| Memory Type | - | - | Mobile DDR SDRAM |
| Speed | - | - | 200MHz |
| Format Memory | - | - | RAM |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Alliance Memory |
AS4C32M16MD1-5BINTR | DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR | |
| AS4C32M16MD1A-5BINTR | DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16 | ||
| AS4C32M16MD1A-5BCN | DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16 | ||
| AS4C32M16MD1-5BIN | DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR | ||
| AS4C32M16MD1A-5BIN | DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16 | ||
| AS4C32M16MD1A-5BCNTR | DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16 | ||
| AS4C32M16MD1-5BCN | DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR | ||
| AS4C32M16MD1-6BCN | DRAM 512M, 1.8V, 166Mhz 32M x 16 Mobile DDR | ||
| AS4C32M16MD1-5BINTR | IC DRAM 512M PARALLEL 60FBGA | ||
| AS4C32M16MD1-5BCNTR | IC DRAM 512M PARALLEL 60FPBGA | ||
| AS4C32M16MD1-6BCNTR | IC DRAM 512M PARALLEL 60FPBGA | ||
| AS4C32M16MD1-6BCN | DRAM 512M, 1.8V, 166Mhz 32M x 16 Mobile DDR | ||
| AS4C32M16MD1-5BIN | DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR | ||
| AS4C32M16MD1-5BCN | DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR | ||
| AS4C32M16MD1A-5BCN | IC DRAM 512M PARALLEL 60FBGA | ||
| AS4C32M16MD1A-5BCNTR | IC DRAM 512M PARALLEL 60FBGA |