 | |  | |
| PartNumber | APTGTQ100DA65T1G | APTGTQ100A65T1G | APTGTQ100DDA65T3G |
| Description | IGBT Modules CC8123 | IGBT Modules CC8125 | IGBT Modules CC3202 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| Technology | - | - | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.65 V | 1.65 V | 1.65 V |
| Continuous Collector Current at 25 C | 100 A | 100 A | 100 A |
| Gate Emitter Leakage Current | 240 nA | 240 nA | 240 nA |
| Pd Power Dissipation | 250 W | 250 W | 250 W |
| Package / Case | SP1 | SP1 | SP3F |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 125 C | + 125 C | + 125 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 2.821917 oz | 2.821917 oz | 3.880136 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGTQ100DA65T1G | IGBT Modules CC8123 | |
| APTGTQ100SK65T1G | IGBT Modules CC8124 | ||
| APTGTQ100A65T1G | IGBT Modules CC8125 | ||
| APTGTQ100DDA65T3G | IGBT Modules CC3202 | ||
| APTGTQ100H65T3G | IGBT Modules CC3189 | ||
| APTGTQ150TA65TPG | IGBT Modules CC6546 |