 | | | |
| PartNumber | APTGT50TDU60PG | APTGT50TA60PG | APTGT50TDU170PG |
| Description | IGBT Modules DOR CC6518 | IGBT Modules DOR CC6519 | IGBT Modules DOR CC6527 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Triple Dual Common Source | 3-Phase | Triple Dual Common Source |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | 1.7 kV |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | 2 V |
| Continuous Collector Current at 25 C | 80 A | 80 A | 70 A |
| Gate Emitter Leakage Current | 600 nA | 600 nA | 400 nA |
| Pd Power Dissipation | 176 W | 176 W | 310 W |
| Package / Case | SP6-P | SP6-P | SP6-P |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | 3.880136 oz | 3.880136 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT50TL601G | IGBT Modules DOR CC8047 | |
| APTGT50TL60T3G | IGBT Modules DOR CC3093 | ||
| APTGT50TDU60PG | IGBT Modules DOR CC6518 | ||
| APTGT50TA60PG | IGBT Modules DOR CC6519 | ||
| APTGT50TDU170PG | IGBT Modules DOR CC6527 |