 | | ||
| PartNumber | APTGLQ200HR120G | APTGLQ200H65G | APTGLQ200H120G |
| Description | IGBT Modules DOR CC6214 | IGBT Modules DOR HOLD CC6254 | IGBT Modules CC6228 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | - | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual Common Emitter | Quad | Full Bridge |
| Collector Emitter Voltage VCEO Max | 1.2 kV, 600 V | 650 V | 1.2 kV |
| Collector Emitter Saturation Voltage | 2.05 V, 1.5 V | 1.85 V | 2.05 V |
| Continuous Collector Current at 25 C | 300 A, 150 A | 270 A | 350 A |
| Gate Emitter Leakage Current | 480 nA, 400 nA | 300 nA | 340 nA |
| Pd Power Dissipation | 1 kW, 340 W | 680 W | 1 kW |
| Package / Case | SP6 | SP6 | SP6 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 125 C | + 100 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | 3.880136 oz | 3.880136 oz |
| Technology | - | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGLQ200HR120G | IGBT Modules DOR CC6214 | |
| APTGLQ200H65G | IGBT Modules DOR HOLD CC6254 | ||
| APTGLQ200H120G | IGBT Modules CC6228 | ||
| APTGLQ200H120G | PWR MOD IGBT4 1200V 350A SP6 | ||
| APTGLQ200HR120G | PWR MOD PHASE LEG/DUAL CE SP6 |