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| PartNumber | APT50GF120LRG | APT50GF120JRDQ3 | APT50GF120B2RG |
| Description | IGBT Modules FG, IGBT, 1200V, 50A, TO-264, RoHS | IGBT Modules FG, IGBT-COMBI, 1200V, 50A, SOT-227 | IGBT Modules FG, IGBT, 1200V, TO-247 T-MAX, RoHS |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Carbide Modules | IGBT Silicon Modules | IGBT Silicon Carbide Modules |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 2.5 V | 2.5 V | 2.5 V |
| Continuous Collector Current at 25 C | 135 A | 120 A | 135 A |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Pd Power Dissipation | 781 W | 521 W | 781 W |
| Package / Case | TO-264-3 | SOT-227-4 | T-Max-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Through Hole | Chassis Mount | Through Hole |
| Maximum Gate Emitter Voltage | 30 V | 30 V | 30 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.352740 oz | 1.058219 oz | - |
| Height | - | 9.6 mm | - |
| Length | - | 38.2 mm | - |
| Operating Temperature Range | - | - 55 C to + 150 C | - |
| Width | - | 25.4 mm | - |
| Tradename | - | ISOTOP | - |