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| PartNumber | AIGW50N65F5XKSA1 | AIGW50N65H5XKSA1 |
| Description | IGBT Transistors DISCRETES | IGBT Transistors DISCRETES |
| Manufacturer | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.66 V | 1.66 V |
| Maximum Gate Emitter Voltage | 30 V | 30 V |
| Continuous Collector Current at 25 C | 80 A | 80 A |
| Pd Power Dissipation | 270 W | 270 W |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | TRENCHSTOP 5 F5 | TRENCHSTOP 5 H5 |
| Packaging | Tube | Tube |
| Brand | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 100 nA | 100 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 240 | 240 |
| Subcategory | IGBTs | IGBTs |
| Tradename | TRENCHSTOP | TRENCHSTOP |
| Part # Aliases | AIGW50N65F5 SP001346882 | AIGW50N65H5 SP001346878 |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
AIGW50N65F5XKSA1 | IGBT Transistors DISCRETES | |
| AIGW50N65H5XKSA1 | IGBT Transistors DISCRETES | ||
| AIGW50N65F5XKSA1 | IGBT 650V TO247-3 | ||
| AIGW50N65H5XKSA1 | IGBT 650V TO247-3 | ||
| AIGW50N65F5 | Transistor IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: AIGW50N65F5) |