| PartNumber | A2C25S12M3 | A2C25S12M3-F |
| Description | IGBT Modules PTD HIGH VOLTAGE | IGBT Modules PTD HIGH VOLTAGE |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Modules | IGBT Modules |
| RoHS | Y | Y |
| Technology | Si | Si |
| Product | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Converter Inverter Brake | Converter Inverter Brake |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V |
| Collector Emitter Saturation Voltage | 1.95 V | 1.95 V |
| Continuous Collector Current at 25 C | 25 A | 25 A |
| Gate Emitter Leakage Current | 500 nA | 500 nA |
| Pd Power Dissipation | 197 W | 197 W |
| Package / Case | ACEPACK2 | ACEPACK2 |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | A2C25S12M3 | A2C25S12M3-F |
| Brand | STMicroelectronics | STMicroelectronics |
| Mounting Style | Through Hole | Press Fit |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 18 | 18 |
| Subcategory | IGBTs | IGBTs |
| Tradename | ACEPACK | ACEPACK |