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| PartNumber | 2SD1857TV2P | 2SD1857ATV2P | 2SD1857ATV2Q |
| Description | Bipolar Transistors - BJT DVR NPN 120V 1.5A | Bipolar Transistors - BJT DVR NPN 160V 1.5A | Bipolar Transistors - BJT DVR NPN 160V 1.5A |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 120 V | 160 V | 160 V |
| Collector Base Voltage VCBO | 120 V | 160 V | 160 V |
| Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
| Maximum DC Collector Current | 2 A | 1.5 A | 3 A |
| Gain Bandwidth Product fT | 80 MHz | 80 MHz | 80 MHz |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| DC Current Gain hFE Max | 82 at 100 mA, 5 V | 82 at 100 mA, 5 V | 270 |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 6.8 mm | 6.8 mm | 6.8 mm |
| Packaging | Ammo Pack | Ammo Pack | Ammo Pack |
| Width | 2.5 mm | 2.5 mm | 2.5 mm |
| Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| DC Collector/Base Gain hfe Min | 82 | 82 | 82 |
| Pd Power Dissipation | 1000 mW | 1000 mW | 1 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 2500 | 2500 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Continuous Collector Current | - | 1.5 A | 1.5 A |