![]() | ![]() | ||
| PartNumber | 2SD1685G | 2SD1685F | 2SD1685 |
| Description | Bipolar Transistors - BJT BIP NPN 5A 20V | Bipolar Transistors - BJT BIP NPN 5A 20V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-126ML-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 20 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 500 mV | - | - |
| Maximum DC Collector Current | 5 A | - | - |
| Gain Bandwidth Product fT | 120 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SD1685 | 2SD1685 | - |
| DC Current Gain hFE Max | 560 | - | - |
| Packaging | Bulk | Bulk | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 5 A | 5 A | - |
| Pd Power Dissipation | 10 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 200 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.014110 oz | - | - |
| Package Case | - | TO-126ML | - |
| Pd Power Dissipation | - | 1.5 W | - |
| Collector Emitter Voltage VCEO Max | - | 20 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| DC Collector Base Gain hfe Min | - | 120 | - |