 |  | | |
| PartNumber | 2SD1223(TE16L1,NQ) | 2SD1223 | 2SD1223 TE16L1 |
| Description | Bipolar Transistors - BJT NPN VCEO 80V VCE 1.5 Ic 4A hFE 2000 min | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum DC Collector Current | 4 A | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SD1223 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 4 A | - | - |
| DC Collector/Base Gain hfe Min | 2000 | - | - |
| Pd Power Dissipation | 15 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 100 | - | - |
| Subcategory | Transistors | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Toshiba |
2SD1223(TE16L1,NQ) | Bipolar Transistors - BJT NPN VCEO 80V VCE 1.5 Ic 4A hFE 2000 min | |
| 2SD1223(TE16L1,NQ) | Bipolar Transistors - BJT NPN VCEO 80V VCE 1.5 Ic 4A hFE 2000 min | ||
| 2SD1223 | Жаңа және түпнұсқа | ||
| 2SD1223 TE16L1 | Жаңа және түпнұсқа |