 |  | | |
| PartNumber | 2SC6026MFVGR,L3F | 2SC6026MFVGR | 2SC6026MFVGR,L3F(T |
| Description | Bipolar Transistors - BJT VESM PLN | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-723-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.15 V | - | - |
| Maximum DC Collector Current | 150 mA | - | - |
| Gain Bandwidth Product fT | 60 MHz | - | - |
| Series | 2SC6026 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 0.8 mm | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 150 mA | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Toshiba |
2SC6026MFVGR,L3F | Bipolar Transistors - BJT VESM PLN | |
| 2SC6026MFVGR,L3F | Bipolar Transistors - BJT VESM PLN | ||
| 2SC6026MFVGR | Жаңа және түпнұсқа | ||
| 2SC6026MFVGR,L3F(T | Жаңа және түпнұсқа | ||
| 2SC6026MFVGRL3F | Bipolar Transistors - BJT VESM PLN ACTIVE | ||
| 2SC6026MFVGRL3FCT-ND | Жаңа және түпнұсқа | ||
| 2SC6026MFVGRL3FDKR-ND | Жаңа және түпнұсқа | ||
| 2SC6026MFVGRL3FTR-ND | Жаңа және түпнұсқа |