 |  | | |
| PartNumber | 2SC5706-TL-E | 2SC5706-TL-H | 2SC5706-T-TL-E |
| Description | Bipolar Transistors - BJT BIP NPN 5A 50V | Bipolar Transistors - BJT BIP NPN 5A 50V | TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-252VAR, LEAD FREE |
| Manufacturer | ON Semiconductor | SY | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 160 mV | 160 mV | - |
| Maximum DC Collector Current | 5 A | 7.5 A | - |
| Gain Bandwidth Product fT | 400 MHz | 400 MHz | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SC5706 | 2SC5706 | - |
| DC Current Gain hFE Max | 560 | 560 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 15 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 700 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.009919 oz | 0.063493 oz | - |
| Package Case | - | TO-252 | - |
| Pd Power Dissipation | - | 15 W | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Collector Base Voltage VCBO | - | 100 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Continuous Collector Current | - | 5 A | - |
| DC Collector Base Gain hfe Min | - | 200 | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| 2SC5706-TL-E | Bipolar Transistors - BJT BIP NPN 5A 50V | ||
| 2SC5706-T-TL-E | TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-252VAR, LEAD FREE | ||
ON Semiconductor |
2SC5706-TL-E | Bipolar Transistors - BJT BIP NPN 5A 50V | |
| 2SC5706-TL-H | Bipolar Transistors - BJT BIP NPN 5A 50V |