 |  | | |
| PartNumber | 2SC3647S-TD-E | 2SC3647 | 2SC3647S-TD-E , RB521G-3 |
| Description | Bipolar Transistors - BJT BIP NPN 2A 100V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PCP-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 120 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.13 V | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 120 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SC3647 | - | - |
| Packaging | Reel | - | - |
| Brand | ON Semiconductor | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001819 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| 2SC3647T-TD-E | Bipolar Transistors - BJT BIP NPN 2A 100V | ||
| 2SC3647S-TD-E | Bipolar Transistors - BJT BIP NPN 2A 100V | ||
| 2SC3647 | Жаңа және түпнұсқа | ||
| 2SC3647S-TD-E , RB521G-3 | Жаңа және түпнұсқа | ||
ON Semiconductor |
2SC3647T-TD-E | Bipolar Transistors - BJT BIP NPN 2A 100V | |
| 2SC3647S-TD-E | Bipolar Transistors - BJT BIP NPN 2A 100V |