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| PartNumber | 2SC2713-BL,LF | 2SC2713-BL,LF(T |
| Description | Bipolar Transistors - BJT NPN Epitaxial Transistor | |
| Manufacturer | Toshiba | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-346-3 | - |
| Transistor Polarity | NPN | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 120 V | - |
| Collector Base Voltage VCBO | 120 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 0.3 V | - |
| Gain Bandwidth Product fT | 100 MHz | - |
| Maximum Operating Temperature | + 125 C | - |
| Series | 2SC2713 | - |
| DC Current Gain hFE Max | 700 | - |
| Packaging | Reel | - |
| Brand | Toshiba | - |
| Continuous Collector Current | 100 mA | - |
| DC Collector/Base Gain hfe Min | 200 | - |
| Pd Power Dissipation | 150 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Unit Weight | 0.000423 oz | - |