 | ||
| PartNumber | 2SB1189T100R | 2SB1189T100Q |
| Description | Bipolar Transistors - BJT PNP 80V 0.7A | Bipolar Transistors - BJT PNP 80V 0.7A |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | MPT-3 | SOT-89-3 |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | - 80 V | - 80 V |
| Collector Base Voltage VCBO | - 80 V | - 80 V |
| Emitter Base Voltage VEBO | - 5 V | - 5 V |
| Collector Emitter Saturation Voltage | - 0.2 V | - |
| Maximum DC Collector Current | 0.7 A | - 0.7 A |
| Gain Bandwidth Product fT | 100 MHz | 120 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | 2SB1189 | 2SB1189 |
| DC Current Gain hFE Max | 390 | 120 at 100 mA, 3 V |
| Height | 1.5 mm | 1.5 mm |
| Length | 4.5 mm | 4.5 mm |
| Packaging | Reel | Reel |
| Width | 2.5 mm | 2.5 mm |
| Brand | ROHM Semiconductor | ROHM Semiconductor |
| Continuous Collector Current | - 0.7 A | - 0.7 A |
| DC Collector/Base Gain hfe Min | 120 | 120 |
| Pd Power Dissipation | 2 W | 2 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | - | 0.004603 oz |