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| PartNumber | 2SB1182TLR |
| Description | Bipolar Transistors - BJT PNP 32V 2A |
| Manufacturer | ROHM Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS | Y |
| Mounting Style | SMD/SMT |
| Transistor Polarity | PNP |
| Configuration | Single |
| Collector Emitter Voltage VCEO Max | 32 V |
| Collector Base Voltage VCBO | - 32 V |
| Emitter Base Voltage VEBO | 5 V |
| Maximum DC Collector Current | 2 A |
| Gain Bandwidth Product fT | 100 MHz |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | 2SB1182 |
| DC Current Gain hFE Max | 180 |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Packaging | Reel |
| Width | 5.5 mm |
| Brand | ROHM Semiconductor |
| Continuous Collector Current | - 2 A |
| DC Collector/Base Gain hfe Min | 180 |
| Pd Power Dissipation | 10000 mW |
| Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Unit Weight | 0.009185 oz |