 |  |  | |
| PartNumber | 2SA2169-TL-E | 2SA2169-E | 2SA2169 |
| Description | Bipolar Transistors - BJT BIP PNP 10A 50V | Bipolar Transistors - BJT BIP PNP 10A 50V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-252-3 | TO-251-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - 50 V | - |
| Collector Base Voltage VCBO | - 50 V | - 50 V | - |
| Emitter Base Voltage VEBO | - 6 V | - 6 V | - |
| Collector Emitter Saturation Voltage | - 290 mV | - 290 mV | - |
| Maximum DC Collector Current | - 13 A | - 13 A | - |
| Gain Bandwidth Product fT | 130 MHz | 130 MHz | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2SA2169 | 2SA2169 | - |
| DC Current Gain hFE Max | 560 | - | - |
| Packaging | Reel | Bulk | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | - 10 A | - 10 A | - |
| DC Collector/Base Gain hfe Min | 200 | 200 | - |
| Pd Power Dissipation | 20 W | 20 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 700 | 500 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.063493 oz | 0.139332 oz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| 2SA2169-TL-E | Bipolar Transistors - BJT BIP PNP 10A 50V | ||
| 2SA2169-E | Bipolar Transistors - BJT BIP PNP 10A 50V | ||
| 2SA2169 | Жаңа және түпнұсқа | ||
ON Semiconductor |
2SA2169-E | Bipolar Transistors - BJT BIP PNP 10A 50V | |
| 2SA2169-TL-E | Bipolar Transistors - BJT BIP PNP 10A 50V |