 |  | | |
| PartNumber | 2SA1162YT1 | 2SA1162YTE85L | 2SA1162YT5LM |
| Description | Bipolar Transistors - BJT 150mA 50V PNP | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | N | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-59-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 0.3 V | - | - |
| Maximum DC Collector Current | 0.15 A | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Height | 1.09 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.5 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.15 A | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
ON Semiconductor |
2SA1162YT1 | Bipolar Transistors - BJT 150mA 50V PNP | |
| 2SA1162YT1 | TRANS PNP 50V 0.15A SC-59 | ||
| 2SA1162YTE85L | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236 | ||
| 2SA1162YT5LM | Жаңа және түпнұсқа |