 |  | | |
| PartNumber | 2N6715 | 2N6715STOA | 2N6715STOB |
| Description | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | N | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-237-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.5 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 500 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2N6715 | - | - |
| DC Current Gain hFE Max | 55 at 10m at 1 V | - | - |
| Height | 4.01 mm | - | - |
| Length | 4.77 mm | - | - |
| Width | 2.41 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Subcategory | Transistors | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
2N6715 | Bipolar Transistors - BJT | |
ON Semiconductor |
2N6715 | Bipolar Transistors - BJT NPN Med Powe | |
| 2N6715STOA | Bipolar Transistors - BJT | ||
| 2N6715STZ | Bipolar Transistors - BJT | ||
| 2N6715STOB | Bipolar Transistors - BJT |