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| PartNumber | 2N6211 PBFREE | 2N6211 | 2N6211JANTX |
| Description | Bipolar Transistors - BJT PNP 275Vcbo 225Vceo 6.0Vebo | Bipolar Transistors - BJT | Trans GP BJT PNP 225V 2A 2-Pin TO-66 Tray - Bulk (Alt: JANTX2N6211) |
| Manufacturer | Central Semiconductor | Microsemi | - |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-66-2 | - | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 225 V | - | - |
| Collector Base Voltage VCBO | 275 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 1.4 V | - 1.4 V | - |
| Gain Bandwidth Product fT | 20 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| Series | 2N62 | - | - |
| DC Current Gain hFE Max | 100 at 1 A, 2.8 V | - | - |
| Packaging | Tube | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 2 A | - | - |
| DC Collector/Base Gain hfe Min | 10 at 1 A, 2.8 V | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | Transistors | - | - |
| Package Case | - | TO-66-2 | - |
| Collector Emitter Voltage VCEO Max | - | - 225 V | - |
| Collector Base Voltage VCBO | - | - 275 V | - |
| Emitter Base Voltage VEBO | - | - 6 V | - |
| Maximum DC Collector Current | - | - 2 A | - |