2N611

2N6111G vs 2N611 vs 2N6111.

 
PartNumber2N6111G2N6112N6111.
DescriptionBipolar Transistors - BJT 7A 30V 40W PNPTRANSISTOR, PNP, TO-220Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Tube
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage3.5 V--
Maximum DC Collector Current7 A--
Gain Bandwidth Product fT10 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N6111--
Height15.75 mm--
Length10.53 mm--
PackagingTube--
Width4.83 mm--
BrandON Semiconductor--
Continuous Collector Current7 A--
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation40 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.211644 oz--
Өндіруші Бөлім № Сипаттама RFQ
2N6111G Bipolar Transistors - BJT 7A 30V 40W PNP
2N611 TRANSISTOR, PNP, TO-220
2N6111. Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Tube
2N6111G. Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-30V, Transition Frequency ft:10MHz, Power Dissipation Pd:40W, DC Collector Current:-7A, DC Current Gain hFE:30hFE, No. of Pins:3Pins,
2N6115 Жаңа және түпнұсқа
2N6116 Жаңа және түпнұсқа
2N6117 Жаңа және түпнұсқа
2N6118 Жаңа және түпнұсқа
STMicroelectronics
STMicroelectronics
2N6111 TRANS PNP 30V 7A TO220AB
ON Semiconductor
ON Semiconductor
2N6111G Bipolar Transistors - BJT 7A 30V 40W PNP
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