 |  | | |
| PartNumber | 2N4296 PBFREE | 2N4291 | 2N4298 |
| Description | Bipolar Transistors - BJT NPN 350Vcbo 250V 4.0Vebo 1.0A 20W | Bipolar Junction Transistor, NPN Type, TO-66 | |
| Manufacturer | Central Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-66-2 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 250 V | - | - |
| Collector Base Voltage VCBO | 350 V | - | - |
| Emitter Base Voltage VEBO | 4 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Gain Bandwidth Product fT | 20 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | 2N42 | - | - |
| DC Current Gain hFE Max | 150 at 50 mA, 10 V | - | - |
| Packaging | Tube | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 50 at 50 mA, 10 V | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | Transistors | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Central Semiconductor |
2N4296 PBFREE | Bipolar Transistors - BJT NPN 350Vcbo 250V 4.0Vebo 1.0A 20W | |
| 2N4298 PBFREE | Bipolar Transistors - BJT NPN 500Vcbo 350V 4.0Vebo 1.0A 20W | ||
| 2N4299 PBFREE | Bipolar Transistors - BJT NPN 350Vcbo 250V 4.0Vebo 1.0A 20W | ||
| 2N4291 | Жаңа және түпнұсқа | ||
| 2N4298 | Bipolar Junction Transistor, NPN Type, TO-66 | ||
| 2N4299 | Жаңа және түпнұсқа | ||
| 2N429E-8 | Жаңа және түпнұсқа |