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| PartNumber | 2N2369ADCSM | 2N2369A | 2N2369A/TR |
| Description | Bipolar Transistors - BJT DUAL NPN SWITCHING TRANSISTORS | Bipolar Transistors - BJT NPN Fast SW SS | Bipolar Transistors - BJT |
| Manufacturer | TT Electronics | Central Semiconductor | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | N |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | Through Hole | Through Hole |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Dual | Single | Single |
| Collector Emitter Voltage VCEO Max | 15 V | 15 V | 15 V |
| Collector Base Voltage VCBO | 40 V | 40 V | 40 V |
| Emitter Base Voltage VEBO | 4.5 V | 4.5 V | 4.5 V |
| Collector Emitter Saturation Voltage | 200 mV | 500 mV | 0.2 V |
| Maximum DC Collector Current | 200 mA | 200 mA | 0.1 A |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
| DC Current Gain hFE Max | 120 at 10 mA, 350 mV | 120 | 120 at 100 mA, 1 V |
| Packaging | Bulk | Bulk | Reel |
| Brand | Semelab / TT Electronics | Central Semiconductor | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 40 at 10 mA, 350 mV | 20 at 100 mA, 1 V | 20 at 100 mA, 1 V |
| Pd Power Dissipation | 360 mW | 360 mW | 0.36 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 50 | 2000 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000282 oz | - | - |
| Package / Case | - | TO-18 | TO-206AA-3 |
| Gain Bandwidth Product fT | - | 500 MHz | - |
| Series | - | 2N2369 | - |
| Height | - | 5.33 mm | - |
| Length | - | 5.84 mm | - |
| Width | - | 5.84 mm | - |
| Part # Aliases | - | 2N2369A PBFREE | - |