US6M1TR vs US6M1 vs US6M1 TCR

 
PartNumberUS6M1TRUS6M1US6M1 TCR
DescriptionMOSFET N+P 30 20V 1A
ManufacturerROHM SemiconductorROHMROHM
Product CategoryMOSFETIC ChipsIC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363T-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current1.4 A--
Rds On Drain Source Resistance170 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge1.4 nC, 2.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.77 mm--
Length2 mm--
SeriesUS6M1--
Transistor Type1 N-Channel, 1 P-Channel--
TypeMOSFET--
Width1.7 mm--
BrandROHM Semiconductor--
Forward Transconductance Min1 S, 0.7 S--
Fall Time8 nS, 10 nS--
Product TypeMOSFET--
Rise Time6 nS, 8 nS--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 nS, 25 nS--
Typical Turn On Delay Time6 nS, 9 nS--
Part # AliasesUS6M1--
Unit Weight0.000265 oz--
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