UMZ1NT1G vs UMZ1 N TL vs UMZ1NT1

 
PartNumberUMZ1NT1GUMZ1 N TLUMZ1NT1
DescriptionBipolar Transistors - BJT 200mA 60V Dual ComplementaryTRANS NPN/PNP 50V 0.2A SOT363
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-70-6--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage0.25 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT114 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesUMZ1N--
Height0.9 mm--
Length2 mm--
PackagingReel--
Width1.25 mm--
BrandON Semiconductor--
Continuous Collector Current0.2 A--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation187 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000988 oz--
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