TIP32A SL vs TIP32A-BP vs TIP32A

 
PartNumberTIP32A SLTIP32A-BPTIP32A
DescriptionBipolar Transistors - BJT PNP 60Vcbo 60Vceo 5.0Vebo 40WBipolar Transistors - BJT PNP -60V -3A 40WTRANS PNP 60V 3A TO-220
ManufacturerCentral SemiconductorMicro Commercial Components (MCC)Fairchild Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
TechnologySi--
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Transistor PolarityPNPPNPPNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max60 V- 60 V-
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V- 5 V-
Collector Emitter Saturation Voltage1.2 V-- 1.2 V
Maximum DC Collector Current5 A- 5 A3 A
Gain Bandwidth Product fT3 MHz-3 MHz
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesTIP32TIP32ATIP32
PackagingTubeTubeBulk Alternate Packaging
BrandCentral SemiconductorMicro Commercial Components (MCC)-
Continuous Collector Current3 A- 3 A- 3 A
DC Collector/Base Gain hfe Min10--
Pd Power Dissipation40 W40 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity501000-
SubcategoryTransistorsTransistors-
Part # AliasesPBFREE SL TIP32A--
Unit Weight-0.081130 oz0.042823 oz
Package Case--TO-220-3
Mounting Type--Through Hole
Supplier Device Package--TO-220
Power Max--2W
Transistor Type--PNP
Current Collector Ic Max--3A
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--10 @ 3A, 4V
Vce Saturation Max Ib Ic--1.2V @ 375mA, 3A
Current Collector Cutoff Max--200μA
Frequency Transition--3MHz
Pd Power Dissipation--40 W
Collector Emitter Voltage VCEO Max--60 V
Collector Base Voltage VCBO--60 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--10
DC Current Gain hFE Max--50
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