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| PartNumber | STW6N90K5 | STW6N120K3 | STW6N120 |
| Description | MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package | MOSFET N-CH 1200V 6A TO-247 | |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 910 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 11 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 110 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | MDmesh | - | - |
| Series | STW6N90K5 | SuperMESH3 | SuperMESH3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | - | - |
| Fall Time | 15.5 ns | 32 ns | 32 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 12.2 ns | 12 ns | 12 ns |
| Factory Pack Quantity | 600 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30.4 ns | 58 ns | 58 ns |
| Typical Turn On Delay Time | 12.4 ns | 30 ns | 30 ns |
| Unit Weight | 0.156264 oz | 1.340411 oz | 1.340411 oz |
| Packaging | - | Tube | Tube |
| Package Case | - | TO-247-3 | TO-247-3 |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Through Hole | Through Hole |
| Supplier Device Package | - | TO-247 | TO-247 |
| FET Type | - | MOSFET N-Channel, Metal Oxide | MOSFET N-Channel, Metal Oxide |
| Power Max | - | 150W | 150W |
| Drain to Source Voltage Vdss | - | 1200V (1.2kV) | 1200V (1.2kV) |
| Input Capacitance Ciss Vds | - | 1050pF @ 100V | 1050pF @ 100V |
| FET Feature | - | Standard | Standard |
| Current Continuous Drain Id 25°C | - | 6A (Tc) | 6A (Tc) |
| Rds On Max Id Vgs | - | 2.4 Ohm @ 2.5A, 10V | 2.4 Ohm @ 2.5A, 10V |
| Vgs th Max Id | - | 5V @ 100μA | 5V @ 100μA |
| Gate Charge Qg Vgs | - | 34nC @ 10V | 34nC @ 10V |
| Pd Power Dissipation | - | 150 W | 150 W |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Id Continuous Drain Current | - | 6 A | 6 A |
| Vds Drain Source Breakdown Voltage | - | 1200 V | 1200 V |
| Rds On Drain Source Resistance | - | 2.4 Ohms | 2.4 Ohms |
| Qg Gate Charge | - | 34 nC | 34 nC |