STW30N65M5 vs STW30N20 vs STW3040

 
PartNumberSTW30N65M5STW30N20STW3040
DescriptionMOSFET POWER MOSFET N-CH 650V 22 AMOSFET STripFET Power MOSFETBipolar Transistors - BJT High voltage fast NPN power tran
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETBipolar Transistors - BJT
RoHSYYY
TechnologySiSi-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-ChannelNPN
Vds Drain Source Breakdown Voltage650 V200 V-
Id Continuous Drain Current22 A30 A-
Rds On Drain Source Resistance139 mOhms65 mOhms-
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage3 V20 V-
Qg Gate Charge64 nC--
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation140 W125 W160 W
ConfigurationSingleSingleSingle
TradenameMDmesh--
PackagingTubeTubeTube
SeriesSTW30N65M5STW30N20STW3040
Transistor Type1 N-Channel1 N-Channel-
TypeMDmesh V Power MOSFETPower MOSFET-
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time10 ns8.8 ns-
Product TypeMOSFETMOSFETBJTs - Bipolar Transistors
Rise Time8 ns15.7 ns-
Factory Pack Quantity6003030
SubcategoryMOSFETsMOSFETsTransistors
Typical Turn Off Delay Time50 ns38 ns-
Typical Turn On Delay Time50 ns35 ns-
Unit Weight1.340411 oz1.340411 oz0.229281 oz
Minimum Operating Temperature-- 55 C- 65 C
Channel Mode-Enhancement-
Height-20.15 mm20.15 mm (Max)
Length-15.75 mm15.75 mm (Max)
Width-5.15 mm5.15 mm (Max)
Forward Transconductance Min-20 S-
Collector Emitter Voltage VCEO Max--400 V
Emitter Base Voltage VEBO--9 V
Collector Emitter Saturation Voltage--0.1 V
Maximum DC Collector Current--30 A
Continuous Collector Current--30 A
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