STP40N20 vs STP40N12 vs STP40N60

 
PartNumberSTP40N20STP40N12STP40N60
DescriptionMOSFET N-Ch 200 Volt 40 Amp
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance45 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation160 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
PackagingTube-Tube
Height9.15 mm--
Length10.4 mm--
SeriesSTB40N20-MDmesh M2
Transistor Type1 N-Channel-1 N-Channel
Width4.6 mm--
BrandSTMicroelectronics--
Fall Time24 ns-11 ns
Product TypeMOSFET--
Rise Time44 ns-13.5 ns
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time74 ns-96 ns
Typical Turn On Delay Time20 ns-20.5 ns
Unit Weight0.011640 oz-0.011640 oz
Package Case--TO-220-3
Pd Power Dissipation--250 W
Vgs Gate Source Voltage--25 V
Id Continuous Drain Current--34 A
Vds Drain Source Breakdown Voltage--650 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--88 mOhms
Qg Gate Charge--57 nC
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