 |  | | |
| PartNumber | STGF10H60DF | STGF-B2 | STGF100N30 |
| Description | IGBT Transistors Trench gate H series 600V 10A HiSpd | ||
| Manufacturer | STMicroelectronics | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-220-3 FP | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 20 A | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | STGF10H60DF | - | - |
| Continuous Collector Current Ic Max | 10 A | - | - |
| Brand | STMicroelectronics | - | - |
| Gate Emitter Leakage Current | 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.081130 oz | - | - |